William Goodhue

William D. Goodhue, Physics and Applied Physics, Photonics Center (POD)

William D. Goodhue, Physics and Applied Physics, Photonics Center (POD)

Professor, Director
Phone:
978-934-3785
Fax:
978-934-4994
Office:
Olney Hall 135 and Photonics Center, 720 Suffolk St.

Expertise

Experimental semiconductor research, materials, fabrication

Research Interest

Research interests include quantum-well-device physics, photonic and optoelectronic device fabrication, vacuum microelectronics, MEMS sensors and molecular beam epitaxy. His work has been reported in numerous articles, reports, book chapters, and meeting speeches.

Educational Background

B.S., WPI
M.A., UMass Amherst
Ph.D., University of Lowell

Biosketch

Dr. Goodhue is the director of the Photonics Center and a staff member at MIT Lincoln Labs.  He previously worked at United Technologies Research Center.

Contributions:

  • Dr. Goodhue grew the first resonant tunneling device to be made into a
    working device.
  • Developed some of the first quantum-well charge-coupled devices
  • The first charged-coupled-device-addressed spatial light modulator
  • The first SHOC laser
  • One of the first quantum-well memory devices
  • The first quantum-well shallow donor photodetector
  • Contributed state-of-the-art materials to a number of studies including a study of Stark shift in coupled quantum wells, a study of shallow donor diffusion in quantum wells, and a study of nonlinear optical effects in a variety of waveguide materials.
  • Developed gradient temperature molecular beam epitaxy which made possible
    the growth of tapered quantum wells and waveguides on planer surfaces.
  • He also developed a chlorine ion beam assisted micromachining technology
    for InGaAs/GaAs/AlGaAs materials. This technology lead to the first two-
    dimensional surface emitting diode laser arrays in theGaAs/AlGaAs materials
    system. The technology also allows the monolithic integration of micron-size
    optical elements with lasers, modulators, waveguides, and antennas and the   
    development of new vacuum microelectronic devices.
  • Recently he has extended the etching technology to bromine which etches most III-V materials.